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Datasheet File OCR Text: |
savantic semiconductor product specification silicon pnp power transistors 2SB1272 d escription with to-126 package darlington high dc current gain applications for low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter -base voltage open collector -7 v i c collector current -2 a p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1272 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma;i b =0 -100 v v (br)cbo collector-base breakdown voltage i c =-1ma; i e =0 -100 v v (br)ebo emitter-base breakdown voltage i e =-5ma;i c =0 -7 v v cesat collector-emitter saturation voltage i c =-2a; i b =-2ma -2.0 v v besat base-emitter saturation voltage i c =-2a; i b =-2ma -2.5 v i cbo collector cut-off current v cb =100v; i e =0 -0.1 ma i ceo collector cut-off current v ce =100v; i b =0 -0.5 ma i ebo emitter cut-off current v eb =-7v; i c =0 -5.0 ma h fe dc current gain i c =-1a ; v ce =-2v 1000 10000 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1272 package outline fig.2 outline dimensions |
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